PART |
Description |
Maker |
MX26C4000BTI-90 MX26C4000BQI-15 MX26C4000BQI-10 MX |
4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PDSO32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 120 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PQCC32 4M-BIT [512K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 512K X 8 FLASH 12V PROM, 90 ns, PDIP32 Switch Actuator; For Use With:18 Series Switches; Accessory Type:Spring Lever Actuator RoHS Compliant: Yes IC DRIVER 1/2BRDG LOW SIDE 16DIP DIODE SCHTTKY 150V 2X30A TO247AD
|
Macronix International Co., Ltd.
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WE256K8-150CC WE256K8-150CCA WE256K8-150CM WE256K8 |
Access time:150 ns; 512K x 8 CMOS EEPROM module Access time:200 ns; 512K x 8 CMOS EEPROM module Access time:250 ns; 512K x 8 CMOS EEPROM module Access time:300 ns; 512K x 8 CMOS EEPROM module
|
White Electronic Designs
|
CY14B101KA-SP45XI CY14B101KA-SP25XI |
64K X 16 NON-VOLATILE SRAM, 45 ns, PDSO48 1 Mbit (128K x 8/64K x 16) nvSRAM with Real Time Clock
|
CYPRESS SEMICONDUCTOR CORP
|
5962R-0323502QUA 5962R-0323501VUC 5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). 512K x 18 SRAM. 15ns access time. Lead finish hot gold. 512K x 18 SRAM. 15ns access time. Lead finish hot solder dipped. 512K x 18 SRAM. 15ns access time. Lead finish gold. Prototype flow. 512K x 18 SRAM. 15ns access time. Lead finish factory option. 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). 512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si).
|
Aeroflex Circuit Technology
|
AS29LV800T-90TI AS29LV800 AS29LV800B-120SC AS29LV8 |
3V 1M x 8/512K x 16 CMOS flash EEPROM, 120ns access time 3V 1M】8/512K】16 CMOS Flash EEPROM 3V 1M x 8/512K x 16 CMOS flash EEPROM, 90ns access time
|
ANADIGICS[ANADIGICS, Inc] Alliance Semiconductor
|
AN28F512-120 |
512K (64K x 8) CMOS FLASH MEMORY
|
Intel Corp.
|
AN28F512 AN28F512-120 AN28F512-150 |
512K (64K x 8) CMOS FLASH MEMORY
|
Intel Corporation
|
LH5P864 LH5P864N-80 |
CMOS 512K(64K x 8) pseudo-static RAM CMOS 512K (64K x 8) Pseudo-Static RAM
|
SHARP[Sharp Electrionic Components]
|
27C512A-90/P 27C512A-90/L 27C512A-12E/P 27C512A-12 |
512K (64K x 8) CMOS EPROM 12k4K的8)的CMOS存储
|
Microchip Technology Inc. Jiangsu Changjiang Electronics Technology Co., Ltd. Microchip Technology, Inc.
|
AS7C3364PFS32A-133TQC AS7C3364PFS32A-133TQI |
3V 64K x 8/512K x 32 pipeline burst synchronous SRAM, 133MHz
|
Alliance Semiconductor
|
CY14B108M-ZSP20XC CY14B108K CY14B108K-ZS20XC CY14B |
1M X 8 NON-VOLATILE SRAM, 20 ns, PDSO44 8 Mbit (1024K x 8/512K x 16) nvSRAM with Real Time Clock; Organization: 1Mb x 8; Vcc (V): 2.7 to 3.6 V; Density: 8 Mb; Package: TSOP 512K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 ROHS COMPLIANT, TSOP2-54 512K X 16 NON-VOLATILE SRAM, 25 ns, PDSO54 ROHS COMPLIANT, TSOP2-54 512K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54 ROHS COMPLIANT, TSOP2-54
|
CYPRESS SEMICONDUCTOR CORP Cypress Semiconductor, Corp.
|
CYD02S18V CYD04S18V CYD09S18V |
FLEx18(TM) 3.3V 64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
|
Cypress
|